tm ?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated february 2012 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. juncti on temperature symbol description ratings units v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 10 a collector current @ t c = 100 o c 5 a i cm (1) pulsed collector current @ t c = 25 o c 15 a i f diode forward current @ t c = 25 o c 5 a p d maximum power dissipation @ t c = 25 o c 73.5 w maximum power dissipation @ t c = 100 o c 29.4 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c g c e collector (flange) to-263ab/d2-pak e g c FGB5N60UNDF 600v, 5a short circuit rated igbt features ? short circuit rated 10us ? high current capability ? high input impedance ? fast switching ? rohs compliant applications ? home appliance inverter-driven appplication - fan motor driver, circulation pump, refrigerator, dish washer general description using advanced npt igbt technology, fairchilds the npt igbts offer the optimum performance for low power inv erter- driven applications where low-losses and short circuit rug ged- ness feature are essential.
2 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated thermal characteristics notes: 2: mounted on 1 square pcb (fr4 or g-10 material) package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case 1.7 o c / w r jc (diode) thermal resistance, junction to case 4.5 o c / w r ja thermal resistance, junction to ambient (pcb mount)(2) 40 o c / w device marking device package rel size tape width quanti ty FGB5N60UNDF FGB5N60UNDF to-263ab/d2-pak - 50 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 10 ua on characteristics v ge(th) g-e threshold voltage i c = 5ma, v ce = v ge 5.5 6.8 8.5 v v ce(sat) collector to emitter saturation voltage i c = 5a , v ge = 15v - 1.9 2.4 v i c = 5a , v ge = 15v, t c = 125 o c - 2.3 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 181 pf c oes output capacitance - 28 pf c res reverse transfer capacitance - 7 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 5a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 5.4 ns t r rise time - 1.9 ns t d(off) turn-off delay time - 25.4 ns t f fall time - 101 202 ns e on turn-on switching loss - 0.08 mj e off turn-off switching loss - 0.07 mj e ts total switching loss - 0.15 mj t d(on) turn-on delay time v cc = 400v, i c = 5a, r g = 10 , v ge = 15v, inductive load, t c = 125 o c - 5.2 ns t r rise time - 2.3 ns t d(off) turn-off delay time - 26.6 ns t f fall time - 125 ns e on turn-on switching loss - 0.15 mj e off turn-off switching loss - 0.09 mj e ts total switching loss - 0.24 mj t sc short circuit withstand time v cc = 350v, r g = 100 , v ge = 15v, t c = 150 o c 10 - - s
3 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated electrical characteristics of the igbt t c = 25c unless otherwise noted electrical characteristics of the diode t c = 25c unless otherwise noted q g total gate charge v ce = 400v, i c = 5a, v ge = 15v - 12.1 nc q ge gate to emitter charge - 1.7 nc q gc gate to collector charge - 7.2 nc symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 5a t c = 25 o c - 1.7 2.2 v t c = 125 o c - 1.6 - t rr diode reverse recovery time i f =5a, di f /dt = 200a/ s t c = 25 o c - 35 ns t c = 125 o c - 87 q rr diode reverse recovery charge t c = 25 o c - 71 nc t c = 125 o c - 240 -
4 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current le vel 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 10 20 30 20v 17v t c = 25 o c 15v v ge = 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 10 20 30 20v 17v t c = 125 o c 15v v ge = 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 0 5 10 15 20 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 5 10 15 20 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 2.5a 10a 5a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 10a 5a i c = 2.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c]
5 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance cha racteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs . gate resistance gate r esistance 4 8 12 16 20 0 4 8 12 16 20 i c = 2.5a 10a 5a common emitter t c = 125 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 1 10 1 10 100 1000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 1 10 100 1000 0.05 0.1 1 10 20 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 0 5 10 15 0 3 6 9 12 15 common emitter t c = 25 o c 400v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 10 20 30 40 50 1 10 100 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c t d(on) t r gate resistance, r g [ ] 0 10 20 30 40 50 1 10 100 1000 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c t d(off) t f gate resistance, r g [ ]
6 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics v s. collector current coll ector current figure 15. switching loss vs. figure 16. switching loss vs gate resistance collec tor current figure 17. turn off switching figure 18. forward characterist ics soa characteristics 2 4 6 8 10 0.1 1 10 common emitter v ge = 15v, r g =10 t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 2 4 6 8 10 1 10 100 1000 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 50 100 1000 common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ ] 2 4 6 8 10 10 100 1000 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 0 1 2 3 4 5 1 10 30 t c = 75 o c t c = 25 o c t c = 125 o c forward voltage, v f [v] forward current, i f [a] 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 20
7 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time figu re 23. transient thermal impedance of igbt 0 150 300 450 600 0.001 0.01 0.1 1 10 100 t c = 25 o c t c = 125 o c t c = 75 o c reverse recovery currnet, i rr [ua] v r [v] 0 1 2 3 4 5 0.00 0.05 0.10 0.15 0.20 0.25 200a/ s 200a/ s di/dt = 100a/ s di/dt = 100a/ s t c = 25 o c t c = 125 o c stored recovery charge, q rr [uc] forwad current, i f [a] 0 1 2 3 4 5 0 30 60 90 120 t c = 25 o c t c = 125 o c di/dt = 100a/ s 200a/ s di/dt = 100a/ s 200a/ s reverse recovery time, t rr [ns] forward current, i f [a] 0.00001 0.0001 0.001 0.01 0.1 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
8 www.fairchildsemi.com FGB5N60UNDF rev. a FGB5N60UNDF 600v, 5a short circuit rated mechanical dimensions to-263ab/d 2_ pak
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